Download PDF by Joachim Piprek: Optoelectronic Devices: Advanced Simulation and Analysis

By Joachim Piprek

ISBN-10: 0387226591

ISBN-13: 9780387226590

Optoelectronic units rework electric indications into optical indications (and vice versa) by using the interplay of electrons and light-weight. complex software program instruments for the layout and research of such units were built lately. in spite of the fact that, the massive number of fabrics, units, actual mechanisms, and modeling techniques frequently makes it tough to choose applicable theoretical types or software program applications. This e-book offers a assessment of units and complex simulation methods written by way of prime researchers and software program builders. it truly is meant for scientists and machine engineers in optoelectronics who're attracted to utilizing complex software program instruments. every one bankruptcy comprises the theoretical heritage in addition to functional simulation effects that support the reader to raised comprehend inner equipment physics. Real-world units comparable to edge-emitting or surface-emitting laser diodes, light-emitting diodes, sunlight cells, photodetectors, and built-in optoelectronic circuits are investigated. The software program programs defined within the e-book can be found to the general public, on a advertisement or noncommercial foundation, in order that the reader is readily in a position to practice comparable simulations.

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Koch: Semiconductor-Laser Fundamentals; Physics of the Gain Materials (Springer, Berlin 1999) 3. J. Hader, S. W. Koch, and J. V. Moloney: Sol. Stat. Electron. 47, 513 (2003) 4. J. Hader, N. Linder, and G. H. D¨ ohler: Phys. Rev. B 55, 6960 (1997) 5. S-H. Park and S-L. Chuang: J. Appl. Phys. 87, 353 (2000) 6. W. Shan, W. Walukiewicz, J. W. : Phys. Rev. Lett. 82, 1221 (1999) 7. E. P. O’Reilly and A. Lindsay: phys. stat. sol. (b) 216, 131 (1999) 8. J. Hader, S. W. Koch, J. V. Moloney, and E. P. O’Reilly: Appl.

Tribute to the device operation. Mainly, the optical field and its interactions with the carrier populations must be described self-consistently, as they are strongly coupled via radiative recombination. Classic approaches for solving the carrier and energy transport equations, such as drift-diffusion, heat flow, and energy balance equations, have been well established by the silicon device simulation industry [3–10]. Historically, the drift-diffusion model constitutes the first approach developed for semiconductor device simulation [3].

It is very satisfying to see that the agreement between experiment and theoretical prediction is very good. The procedure described here could be automated and integrated into software used in diagnostic tools that measure the luminescence of devices while still on the wafer. The ideal spectra could be precalculated and tabulated for several inhomogeneous broadenings. The comparison between experimental and theoretical luminescence spectra would then be done by scanning through the data sets for different broadenings while shifting the spectra according to the mismatch in the peak position.

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Optoelectronic Devices: Advanced Simulation and Analysis by Joachim Piprek

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